
IXTV200N10T
IXTV200N10TS
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
PLUS220 (IXTV) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 50A
R G = 3.3 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 50A
60
96
9400
1087
140
35
31
45
34
152
47
47
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.27 ° C/W
R thCH
PLUS220
0.21
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
V GS = 0V
200
A
I SM
V SD
t rr
Q RM
I RM
Repetitive, Pulse width limited by T JM
I F = 50A, V GS = 0V, Note 1
I F = 100A, V GS = 0V,-di/dt = 100A/ μ s
V R = 50V
76
205
5.4
500
1.0
A
V
ns
nC
A
PLUS220SMD (IXTV_S) Outline
Notes: 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5mm or less from the package body.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537